UV irradiation effect on sol-gel indium tin oxide nanopatterns replicated by room-temperature nanoimprint

被引:6
|
作者
Kang, Yuji [1 ,2 ]
Okada, Makoto [1 ,2 ,3 ]
Nakamatsu, Ken-Ichiro [1 ,2 ,3 ]
Kanda, Kazuhiro [1 ,2 ]
Haruyama, Yuichi [1 ,2 ]
Matsui, Shinji [1 ,2 ]
机构
[1] Univ Hyogo, Grad Sch Sci, LASTI, Ako, Hyogo 6781205, Japan
[2] JST CREST, Chiyoda Ku, Tokyo 1020075, Japan
[3] JSPS, Chiyoda Ku, Tokyo 1028471, Japan
来源
关键词
annealing; Fourier transform spectra; indium compounds; infrared spectra; nanolithography; nanostructured materials; semiconductor thin films; soft lithography; sol-gel processing; spin coating; ultraviolet radiation effects; IMPRINT LITHOGRAPHY;
D O I
10.1116/1.3243167
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report the first room-temperature nanoimprint lithography (RT-NIL) process using sol-gel indium tin oxide (ITO) as a replicated material. The spin-coated ITO film has to be annealed over 600 degrees C to obtain a low resistivity. The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappear after annealing at 200 degrees C. To overcome the above problem, they examined UV irradiation effects on a spin-coated ITO film. As a result, they found that the ITO patterns imprinted by RT-NIL stayed the same after being annealed at 600 degrees C for 1 h due to 254 nm UV irradiation before annealing.
引用
收藏
页码:2805 / 2809
页数:5
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