Modification of the Surface Properties of Hypereutectic Silumin by Irradiation with a Modulated Electron Beam

This work is a continuation of study [1] devoted to the effect of a submillisecond pulsed electron beam on the surface of hypereutectic silumin (AlSi20). Experiments are performed using a SOLO electron source with a plasma cathode in which the generated pulse power can be controllably changed during the pulse, which allows control of the energy-input rate to the target surface. The application of such a unique electron source enables consideration of the effect of maintaining the surface temperature of the irradiated sample (at a level close to the silumin melting point) at a pulse duration of less than 1 ms on modification of the properties of this surface. An increase in the time of maintaining the sample-surface temperature is shown to improve its microhardness and wear resistance. The modified layer has a cell structure similar to that formed during high-speed crystallization. The modified-layer depth reaches 60 mu m.