Br-Doped n-Type SnSe2: Single-Crystal Growth and Thermoelectric Properties

被引:16
|
作者
Anh-Tuan Pham [1 ,2 ]
Thi Hoa Vu [1 ,2 ]
Nguyen, Quang, V [1 ,2 ]
Minh Thanh Vu [1 ,2 ]
Park, Jong Ho [3 ]
Park, Su-Dong [3 ]
Cho, Sunglae [1 ,2 ]
机构
[1] Univ Ulsan, Dept Phys, Ulsan 44610, South Korea
[2] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea
[3] Korea Electrotechnol Res Inst KERI, Energy Convers Res Ctr, Chang Won 51543, South Korea
基金
新加坡国家研究基金会;
关键词
thermoelectric material; SnSe2; ultralow thermal conductivity; Br doping; single crystal; TRANSPORT-PROPERTIES; FIGURE; PHONON; MERIT; SE;
D O I
10.1021/acsaem.1c00278
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, pure, large Br-doped SnSe 2 single crystals were successfully synthesized using the temperature gradient technique. Br acts as a donor, resulting in electron concentrations up to similar to 6.83 X 10(19) cm(-3) at room temperature. All samples exhibited metal-like electrical resistivities and Seebeck coefficient behaviors over a temperature range of 300-673 K. Br doping greatly improved the power factor, especially along the in-plane direction. We observed anisotropy in the electrical conductivity, Seebeck coefficient, and, most notably, thermal conductivity. An ultralow thermal conductivity was achieved along the out-of-plane direction, leading to a maximum ZT, of 0.54 at 673 K in the Br-doped sample, which is twice as large as that of the in-plane direction, ZT(a) = 0.25.
引用
收藏
页码:2908 / 2913
页数:6
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