Fabrication of metal/ferroelectric/insulator/semiconductor field effect transistor using Mo/Pb(Zr,Ti)O3/ZrTiO4/poly Si thin film structure

被引:5
|
作者
Park, JH [1 ]
Yoon, YG [1 ]
Joo, SK [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
关键词
PZT; ZT; MFIS; MFISFET; poly-Si; TFT; memory window;
D O I
10.1080/10584580290171720
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, metal/ferroelectric/insulator/semiconductor field effect transistors (MFISFET) using Mo/Pb(Zr,Ti)O-3 (PZT)/ZrTiO4 (ZT)/polycrystalline Si (poly-Si) thin film structures were fabricated and characterized for nonvolatile nondestructive read-out (NDRO) memory devices. The 300 nm-thick PZT films were deposited by reactive RF magnetron sputtering method on ZrTiO4 (50 nm)/Si substrates. After annealing process at 600 (square) for crystallization of PZT thin films, there was no inter-diffusion of Pb and Si. C-V hysteresis was observed in Pt/PZT/ZrTiO4/Si (MFIS) structures. For fabricating memory device, we used thin film transistor (TFT) with poly-Si thin film. The amorphous Si thin films on SiO2 substrates were crystallized by MILC (Metal Induced Lateral Crystallization) method at low temperature as 550 (square). The drain current-gate voltage (I-D-V-G) characteristics of MFISFET using the Mo/PZT/ZrTiO4/poly-Si thin film structures showed threshold hysteresis due to the ferroelectric property of the PZT thin films. The threshold hysteresis value, i.e. memory window was about 0.6 V in the applied gate voltage range of 5 V, and almost same as C-V hysteresis value in MFIS structure.
引用
收藏
页码:13 / 20
页数:8
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