Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

被引：0
|
作者：
Gazizulina, A. S. [1 ]
Nasirov, A. A. [1 ]
Nebesniy, A. A. [1 ]
Parchinskiy, P. B. [1 ]
Kim, Dojin [2 ]
机构：
[1] Natl Univ Uzbekistan, Tashkent 100176, Uzbekistan
[2] Chungnam Natl Univ, Taejon 305764, South Korea
来源：
SEMICONDUCTORS | 2021年 / 55卷 / 02期
关键词：
anisotropy; negative magnetoresistance; epitaxial layers; ferromagnetic ordering; MAGNETIC-ANISOTROPY; (GA; MN)AS; MAGNETOTRANSPORT;
D O I：
10.1134/S1063782621020123
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures in GaMnAs that emerge in the bulk of the epitaxial layer during growth.
引用
收藏
页码：214 / 218
页数：5
相关论文
共 50 条
  • [1] Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers
    A. S. Gazizulina
    A. A. Nasirov
    A. A. Nebesniy
    P. B. Parchinskiy
    Dojin Kim
    [J]. Semiconductors, 2021, 55 : 214 - 218
  • [2] Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers
    P. B. Parchinskiy
    A. S. Gazizulina
    A. A. Nasirov
    [J]. Russian Physics Journal, 2023, 65 : 1732 - 1737
  • [3] Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers
    Parchinskiy, P. B.
    Gazizulina, A. S.
    Nasirov, A. A.
    [J]. RUSSIAN PHYSICS JOURNAL, 2023, 65 (10) : 1732 - 1737
  • [4] Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic properties
    Wenisch, J.
    Ebel, L.
    Gould, C.
    Schmidt, G.
    Molenkamp, L. W.
    Brunner, K.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 638 - 641
  • [5] Anisotropy of magnetoresistance in Be Co-doped GaMnAs
    Parchinskiy, P. B.
    Yu, Fucheng
    Sekar, P. V. Chandra
    Kim, Dojin
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (07) : 709 - 711
  • [6] Real-structure anisotropy in GaMnAs layers
    Sourek, Z.
    Kopecky, M.
    Kub, J.
    Fabry, J.
    Novak, V.
    Cukr, M.
    [J]. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2011, 67 : C442 - C442
  • [7] Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers
    Desrat, W.
    Kamara, S.
    Terki, F.
    Charar, S.
    Sadowski, J.
    Maude, D. K.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (06)
  • [8] The tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs junctions
    Ju, Y.
    Shen, R.
    Zheng, Z. M.
    Xing, D. Y.
    [J]. PHYSICS LETTERS A, 2007, 371 (04) : 327 - 331
  • [9] Anisotropic magnetoresistance of GaMnAs:Be
    Parchinskiy, P.B.
    Gazizulina, A.S.
    Nasirov, A.A.
    Yuldashev, Sh U.
    [J]. Semiconductor Physics, Quantum Electronics and Optoelectronics, 2024, 27 (03): : 302 - 307
  • [10] MAGNETORESISTANCE OF EPITAXIAL NORMAL-GAP LAYERS
    KITOROAGE, AD
    NEDEOGLO, DD
    RADU, RK
    CHEBAN, AG
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (05): : 123 - 125
12345