A Bendable, Stretchable Transistor with Aligned Carbon Nanotube Films

被引:17
|
作者
Yu, Ilhwan [1 ,2 ]
Ye, Youngsin [1 ]
Moon, Sangji [1 ]
Lee, Seoung-Ki [1 ]
Joo, Yongho [1 ]
机构
[1] KIST, Inst Adv Composite Mat, 92 Chudong Ro, Jeonbuk 55324, South Korea
[2] Chonbuk Natl Univ, Dept Mineral Resources & Energy Engn, 567 Baekje Daero, Jeonju Si 54896, Jeonbuk, South Korea
来源
ADVANCED MATERIALS INTERFACES | 2019年 / 6卷 / 23期
关键词
evaporative self-assembly; ion gels; semiconducting carbon nanotubes; stretchable transistors; FINGERING INSTABILITY; RAMAN-SPECTROSCOPY; ELECTRONICS; ARRAYS; DISPERSION; ALIGNMENT; DENSITY; DRIVEN;
D O I
10.1002/admi.201900945
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Controlling the packing density and degree of alignment of carbon nanotubes is essential for obtaining optimal charge transport properties in carbon nanotube transistors. Here, a method is introduced for evaporative self-assembly at the air-water interface to deposit continuous films of well-aligned, uniform semiconducting bundle nanotubes for stretchable and bendable transistor applications. Polymer-wrapped nanotubes in organic ink are dropped on the water surface and diffused at the air-water interface to deposit aligned semiconducting single-walled carbon nanotubes on a partially submersed substrate. The speed dependency of the substrate is also elucidated. The optimized conditions enable alignment within +/- 5 degrees at a packing density of approximate to 12.5 nanotubes mu m(-1) with continuously well-ordered layers. The semiconducting single-walled carbon nanotube films enabled a high degree of stretchability, with the flexible nature of the ion gel maintaining the charge properties of the device. The resulting ion-gel-based field effect transistor devices have a high mobility of 5.11 cm(2) V-1 s(-1) and an on/off ratio >10(4) under both bending and elongation and demonstrate a continuous performance over 1000 stretching cycles.
引用
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页数:6
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