Precise determination of surface Debye-temperature of Si(111)-7 x 7 surface by reflection high-energy positron diffraction

被引：8
|
作者：
Fukaya, Y
Kawasuso, A
Hayashi, K
Ichimiya, A
机构：
[1] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Gunma 3701292, Japan
[2] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 237卷 / 1-4期
关键词：
surface Debye-temperature; reflection high-energy positron diffraction (RHEPD); total reflection; silicon;
D O I：
10.1016/j.apsusc.2004.06.057
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface Debye-temperature of the topmost surface of the Si(1 1 1)-7 x 7 has been determined by reflection high-energy positron diffraction. The positron diffraction intensity at the total reflection condition is altered by the thermal vibration amplitude of atoms only on the topmost surface because the incident positrons are not able to penetrate into the bulk in this condition. The intensity of totally reflected positrons was analyzed by means of the dynamical diffraction theory. The surface Debye-temperature was determined to be 310 +/- 50 K, which is smaller than those determined in previous studies using electron diffraction. The vibration amplitude was estimated to be 0.13 Angstrom at 293 K. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 33
页数：5
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