Light induced degradation of Cu(In,Ga)Se2 thin film surfaces

被引：12

作者：

Hoelscher, T. ^{[1
]}

Foerster, S. ^{[1
]}

Schneider, T. ^{[1
]}

Maiberg, M. ^{[1
]}

Widdra, W. ^{[1
]}

Scheer, R. ^{[1
]}

机构：

[1] Martin Luther Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 01期

关键词：

SOLAR-CELLS; POLYCRYSTALLINE CU(IN; GA)SE-2; EFFICIENCY;

D O I：

10.1063/1.4992116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate light-induced degradation of Cu(In, Ga) Se-2 (CIGSe) layers by means of timeresolved photoluminescence (TRPL) measurements. Illumination in the range of minutes with 1 sun white light equivalent leads to a strong reduction of the carrier lifetime as determined by TRPL. Ambient storage in the dark, however, does not cause degradation. X-ray photoelectron spectroscopy of the CIGSe surface reveals a light induced enhancement of Na 1s and O 1s corelevel emission. The position of the O 1s peak at 531.6 eV is related to a Na-O-CIGSe bonding complex. The light-induced degradation of the CIGSe layer finally translates into inferior open circuit voltages due to the dominance of interface recombination in completed solar cell devices. This study has implications for laboratory research and may need to be regarded in CIGSe module production. Published by AIP Publishing.

引用

页数：4

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