Self-assembly of epitaxial monolayers for vacuum wafer bonding

被引：10
|
作者：
Altfeder, Igor [1 ]
Huang, Biqin
Appelbaum, Ian
Walker, B. C.
机构：
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[2] Univ Delaware, Dept Phys, Newark, DE 19716 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期
关键词：
D O I：
10.1063/1.2399358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled epitaxial metal monolayers can be used for heterointegration of mismatched semiconductors, leading to simultaneously low interfacial resistance and high optical transparency. Lattice-mismatched wafers of Si(100) and Si(111) were bonded at room temperature in situ after vacuum deposition of a single atomic layer of Ag. The interfacial resistance was measured to be 3.9x10(-4) Omega cm(2) and the optical transmission of the interface at 2500 nm is approximately 98%. Electron confinement in ultrathin Ag layers as a possible contributor to the bonding energy. (c) 2006 American Institute of Physics.
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