Flux Controlled Floating Memristor Employing VDTA: Incremental or Decremental Operation

被引:31
|
作者
Vista, John [1 ]
Ranjan, Ashish [1 ]
机构
[1] Natl Inst Technol Manipur, Dept Elect & Commun Engn, Imphal 795001, Manipur, India
关键词
Memristors; Transconductance; Integrated circuit modeling; Hysteresis; Semiconductor device modeling; Neuromorphics; Mathematical model; Incremental; decremental operation; memristor; neuromorphic circuit; non volatile nature; pinched hysteresis loop; voltage difference transconductance amplifier (VDTA);
D O I
10.1109/TCAD.2020.2999919
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This research article offers a floating memristor model using single voltage difference transconductance amplifier (VDTA) and grounded passive components. The proper utilization of VDTA port characteristics with passive components exhibits both incremental and decremental modes of operation without multiplier circuit. The performance analysis of proposed memristor is verified by using post layout Cadence Virtuoso simulation to examine the characteristics of all possible temperature and process Corners. In addition, experimental verification of VDTA-based memristor is done using commercially available operational transconductance amplifier (OTA) as IC CA3080. The results obtained through simulation and experiment follows the theoretical aspects. Moreover, an application perspective of the proposed design includes a brief neuromorphic circuit implementation for Pavlovian associative learning experiment.
引用
收藏
页码:364 / 372
页数:9
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