Structural and magnetic properties of Ge0.7Mn0.3 thin films

被引：1

作者：

Kim, Sung-Kyu ^{[2
,3
]}

Son, Jong Yeog ^{[1
]}

Shin, Young-Han ^{[1
]}

Jo, Moon-Ho ^{[1
]}

Park, S. ^{[4
]}

Hong, Tae Eun ^{[5
]}

Yee, K. J. ^{[6
]}

机构：

[1] POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] POSTECH, Natl Ctr Nanomat Technol, Pohang 790784, South Korea

[3] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea

[4] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[5] Korea Basic Sci Inst, Busan Ctr, Pusan 609735, South Korea

[6] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 10期

关键词：

Semiconductors; Deposition process; Sputtering; Magnetic properties and measurements; SINGLE-CRYSTALS; FERROMAGNETIC SEMICONDUCTOR; TEMPERATURE FERROMAGNETISM; PRECIPITATION; CR;

D O I：

10.1016/j.tsf.2009.08.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge0.7Mn0.3 thin films were fabricated on Al2O3 (0001) and glass substrates at growth temperatures ranging from room temperature to 500 degrees C by a radio frequency magnetron sputtering. We found that the Ge0.7Mn0.3 thin films showed a polycrystalline-to-amorphous transition at about 360 degrees C, and the ferromagnetic transition temperature of each thin film depends on its structure crystalline or amorphous states. Particularly, the Ge0.7Mn0.3 thin films showed room temperature ferromagnetism when they were fabricated at temperatures above the crystallization temperature. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2665 / 2668

页数：4

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