Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides

被引：78

作者：

Yap, Kuan Pei ^{[1
,2
]}

Delage, Andre ^{[1
]}

Lapointe, Jean ^{[1
]}

Lamontagne, Boris ^{[1
]}

Schmid, Jens H. ^{[1
]}

Waldron, Philip ^{[1
]}

Syrett, Barry A. ^{[2
]}

Janz, Siegfried ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2009年 / 27卷 / 18期

关键词：

Scattering loss; sidewall roughness; silicon-on-insulator (SOI) waveguide; star coupler;

D O I：

10.1109/JLT.2009.2021562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mu m in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.

引用

页码：3999 / 4008

页数：10

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