Evaluation of the Imax-fsw-dv/dt Trade-off of High Voltage SiC MOSFETs Based on an Analytical Switching Loss Model

被引：0
|
作者：
Hu, Anliang [1 ]
Biela, Jurgen [1 ]
机构：
[1] Swiss Fed Inst Technol, Lab High Power Elect Syst HPE, Zurich, Switzerland
来源：
2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年
关键词：
Power semiconductor device; Wide bandgap devices; Silicon Carbide (SiC); MOSFET; Switching losses; Device modeling; Thermal stress;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Advanced high voltage (3.3-15kV) SiC MOSFETs have been developed for future medium voltage converters over the past decade due to their superior performance. In order to better understand the operation limits and potential of these devices, this paper evaluates the I-max-f(sw)-dv/dt trade-off (maximal curren-thandling capability at a specific switching frequency and at a defined switching speed) for high voltage SiC MOSFETs based on a proposed linearized analytical switching loss model. There, high voltage SiC MOSFETs manufactured by Cree combined with data from literature for scaling are used as reference.
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页数：11
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