Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope

被引：10

作者：

Tomiye, H ^{[1
]}

Kawami, H ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] NISSHIN ELECT CO LTD,UKYO KU,KYOTO 615,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

scanning capacitance microscope; atomic force microscope; scanning tunneling microscope; SiO2/Si; trapped charge;

D O I：

10.1016/S0169-4332(97)80072-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the local electrical properties of an SiO2/Si structure using a novel scanning capacitance microscope (SCaM) combined with an atomic force microscope (AFM). The electrical properties of the SiO2/Si system is investigated using the microscope. We investigated a lateral p-n junction is formed by ion implantation of P into a lightly B-doped Si wafer followed by thermal oxidation. It is demonstrated that the local impurity concentration profiling is achieved by the C-V characteristics. In the nest experiment we have injected charge into SiO, and investigated the nature of charge storage at the SiO2/Si interface. Erasing of the written-in pattern was possible by applying a positive pulse. This paper will report on the development of a novel SCaM and its application to the characterization of SiO2/Si and fabrication of a charge storage device.

引用

页码：166 / 170

页数：5

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