MEMS phase shifters on low-resistivity silicon wafer

被引：2
|
作者：
Guo, F. [1 ]
Zhang, Y. [1 ]
Lin, J. [1 ]
Kong, J. [1 ]
Zhu, S. [1 ]
Lai, Z. [1 ]
Zhu, Z. [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China
来源：
IEEE ICMA 2006: PROCEEDING OF THE 2006 IEEE INTERNATIONAL CONFERENCE ON MECHATRONICS AND AUTOMATION, VOLS 1-3, PROCEEDINGS | 2006年
基金：
美国国家科学基金会;
关键词：
PS substrate MEMS CPW phase shifters polyimid; insertion loss;
D O I：
10.1109/ICMA.2006.257603
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The basic structure of MEMS millimeter-wave phase shifters was consisted of a coplanar wave-guide (CPW) transmission line periodically loaded with several thin metallic membranes. A new method was developed to obtain lower-loss microwave coplanar waveguide (CPW) by means of forming porous silicon (PS) on low-resistivity silicon wafer. The CPW fabricated on porous silicon (PS) oxidated porous silicon (OPS) coated with polyimide had demonstrated lower loss than 0-7.5dB/1.2cm in 0-40GHz, and comparison with quartz, low-resistivity silicon and multi-structure of poly-Si/SiO2 on high-resistivity silicon in measure and analysis.
引用
收藏
页码：497 / +
页数：2
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