Strong enhancement of Raman-induced nonreciprocity in silicon waveguides by alignment with the crystallographic axes

被引:14
|
作者
Krause, Michael [1 ]
Renner, Hagen [1 ]
Brinkmeyer, Ernst [1 ]
机构
[1] Tech Univ Hamburg, D-21073 Hamburg, Germany
关键词
crystal orientation; Raman spectra; silicon; waveguides; wires; OPTICAL ISOLATION;
D O I
10.1063/1.3279151
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman gain in silicon photonic wires depends on the relative propagation directions of the pump and Stokes waves due to strong longitudinal mode-field components. Here we show that this Raman-induced nonreciprocity can be varied in a wide range by changing the orientation of the waveguide with respect to the crystallographic axes. In a << 001 >> orientation, the nonreciprocity reaches its maximum which is larger by more than two orders of magnitude as compared to the traditional << 011 >> orientation. The waveguide is then practically Raman-inactive for copropagation, while the contradirectional Stokes wave may experience significant Raman gain.
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页数:3
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