Physical origin of residual thermal stresses in a multilayer ceramic capacitor

被引:7
|
作者
Shin, Hyunho
Park, Jong-Sung
Hong, Kug Sun [1 ]
Jung, Hyun Suk
Lee, Jung-Kun
Rhee, Kyong Yop
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Kangnung Natl Univ, Dept Ceram Engn, Kangnung 210702, South Korea
[3] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA
[4] Kyung Hee Univ, Sch Mech & Ind Syst Engn, Yongin 449701, South Korea
关键词
D O I
10.1063/1.2713364
中图分类号
O59 [应用物理学];
学科分类号
摘要
The physical origin of the residual stresses developed in the ceramic layer of the active region in a multilayer ceramic capacitor was numerically investigated. The compressive in-plane stress components sigma(11) and sigma(22) originate without regard to the presence of the margins but rather from the difference in in-plane thermal shrinkage between ceramic and metal electrode. The out-of-plane stress component sigma(33) physically originates mainly through the presence of the housing margin; the presence of the lateral margin is a minor source: the more ceramic-rich margins hinder the apparent vertical shrinkage of the active region to yield tensile sigma(33). (c) 2007 American Institute of Physics.
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页数:5
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