Substrate temperature dependence of electrical conduction in nanocrystalline CdTe:TiO2 sputtered films

被引:8
|
作者
Sharma, SN
Shivaprasad, SM
Kohli, S
Rastogi, AC
机构
[1] Natl Phys Lab, Mat Div, New Delhi 110012, India
[2] Natl Phys Lab, Surface Phys Grp, New Delhi 110012, India
[3] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA
关键词
D O I
10.1351/pac200274091739
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
TiO2 thin films with high volume fraction (similar to50-70 %) of CdTe nanoparticles were prepared by radio frequency (rf) magnetron sputtering from a composite TiO2:CdTe target. With increase in substrate temperature T-S from room temperature (RT similar to 300 K) to 373 K, a transition from an ordered structure exhibiting metallic-type conduction to a disordered structure exhibiting nonmetallic-type conduction was observed for annealed nanocrystalline CdTe:TiO2 films. The annealed RT-deposited films showed a large coalescence of distinct islands (size similar to0.3-0.7 mum) mainly of Cd and CdTe, and as result, a 3D network was realized. For metallic regime films, electrical conduction is essentially due to electrical percolation through Cd/CdTe crystallites embedded in an amorphous TiO2 matrix. However, the annealed high T, films consisted of noncoalescent, small islands (size similar to0.15-0.3 mum) of Cd and CdTe embedded in amorphous TiO2 matrix. Here, the conduction is essentially by hopping mechanism via thermally activated tunneling.
引用
收藏
页码:1739 / 1749
页数:11
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