Sources of phase error and design considerations for silicon-based monolithic high-pass/low-pass microwave phase shifters

被引：61
|
作者：
Morton, Matthew A. [1 ]
Comeau, Jonathan P.
Cressler, John D.
Mitchell, Mark
Papapolymerou, John
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Georgia Tech Res Inst, Atlanta, GA 30332 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2006年 / 54卷 / 12期
关键词：
microwave; monolithic microwave integrated circuit (MMIC) phase shifters; phase shifters; phased arrays; silicon germanium;
D O I：
10.1109/TMTT.2006.886162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and nonideal switches is presented. Each component utilized in the implementation of a monolithic high-pass/low-pass phase shifter is analyzed, and its influence on phase behavior is shown in detail, with an emphasis on the net impact on absolute phase variation. The design of the individual phase-shifter filter sections and the influence of bit ordering on overall performance are also addressed. An X-band 5-bit phase shifter fabricated in a 200-GHz SiGe HBT BiCMOS technology platform is used to validate this analysis and our design methodology and achieves an absolute rms phase error of 4 degrees and relative rms phase error of 3 degrees for operation from 8.5 to 10.5 GHz.
引用
收藏
页码：4032 / 4040
页数：9
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