GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

被引：6
|
作者：
Abramkin, D. S. [1 ,2 ]
Petrushkov, M. O. [1 ]
Putyato, M. A. [1 ]
Semyagin, B. R. [1 ]
Emelyanov, E. A. [1 ]
Preobrazhenskii, V. V. [1 ]
Gutakovskii, A. K. [1 ,2 ]
Shamirzaev, T. S. [1 ,2 ,3 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Ural Fed Univ, Ekaterinburg 620002, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 09期
基金：
俄罗斯科学基金会;
关键词：
hybrid substrates; photoluminescence; GaP on Si; molecular-beam epitaxy; quantum wells; SILICON; SEMICONDUCTORS; GAP;
D O I：
10.1134/S1063782619090021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
引用
收藏
页码：1143 / 1147
页数：5
相关论文
共 50 条
  • [1] GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
    D. S. Abramkin
    M. O. Petrushkov
    M. A. Putyato
    B. R. Semyagin
    E. A. Emelyanov
    V. V. Preobrazhenskii
    A. K. Gutakovskii
    T. S. Shamirzaev
    Semiconductors, 2019, 53 : 1143 - 1147
  • [2] INGAAS QUANTUM-WELL WIRES GROWN ON PATTERNED GAAS SUBSTRATES
    MIRIN, RP
    TAN, IH
    WEMAN, H
    LEONARD, M
    YASUDA, T
    BOWERS, JE
    HU, EL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 697 - 700
  • [3] GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
    Sengupta, DK
    Fang, W
    Malin, JI
    Li, J
    Horton, T
    Curtis, AP
    Hsieh, KC
    Chuang, SL
    Chen, H
    Feng, M
    Stillman, GE
    Li, L
    Liu, HC
    Bandara, KMSV
    Gunapala, SD
    Wang, WI
    APPLIED PHYSICS LETTERS, 1997, 71 (01) : 78 - 80
  • [4] GAAS MULTIPLE QUANTUM-WELL MICRORESONATOR MODULATORS GROWN ON SILICON SUBSTRATES
    BARNES, P
    WOODBRIDGE, K
    ROBERTS, C
    STRIDE, AA
    RIVERS, A
    WHITEHEAD, M
    PARRY, G
    ZHANG, X
    STATONBEVAN, A
    ROBERTS, JS
    BUTTON, C
    OPTICAL AND QUANTUM ELECTRONICS, 1992, 24 (02) : S177 - S192
  • [5] INFLUENCES OF DARK LINE DEFECTS ON CHARACTERISTICS OF ALGAAS/GAAS QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES
    HASEGAWA, Y
    EGAWA, T
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A): : 2994 - 2999
  • [6] GaInAs/InP quantum-well infrared photodetectors grown on Si substrates
    Razeghi, M
    Jiang, J
    Jelen, C
    Brown, GJ
    MATERIALS FOR INFRARED DETECTORS, 2001, 4454 : 78 - 84
  • [7] Broken-gap quantum-well tunnel junctions grown on GaSb substrates
    Lumb, Matthew P.
    Mack, Shawn
    Gonzalez, Maria
    Schmieder, Kenneth J.
    Bennett, Mitchell F.
    Affouda, Chaffra A.
    Moore, James E.
    Walters, Robert J.
    JOURNAL OF PHOTONICS FOR ENERGY, 2017, 7 (03):
  • [8] Spin injection in GaAs/GaSb quantum-well heterostructures
    Ya. V. Terent’ev
    A. A. Toropov
    B. Ya. Meltser
    A. N. Semenov
    V. A. Solov’ev
    I. V. Sedova
    A. A. Usikova
    S. V. Ivanov
    Semiconductors, 2010, 44 : 194 - 197
  • [9] Spin Injection in GaAs/GaSb Quantum-Well Heterostructures
    Terent'ev, Ya. V.
    Toropov, A. A.
    Meltser, B. Ya.
    Semenov, A. N.
    Solov'ev, V. A.
    Sedova, I. V.
    Usikova, A. A.
    Ivanov, S. V.
    SEMICONDUCTORS, 2010, 44 (02) : 194 - 197
  • [10] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates
    Abramkin, D. S.
    Petrushkov, M. O.
    Putyato, M. A.
    Semyagin, B. R.
    Shamirzaev, T. S.
    SEMICONDUCTORS, 2018, 52 (11) : 1484 - 1490
12345