Materials Science of Graphene for Novel Device Applications

被引:2
|
作者
Lee, Geunsik [1 ]
Gong, Cheng [1 ]
Pirkle, Adam [1 ]
Venugopal, Archana [1 ]
Lee, Bongki [1 ]
Park, SeongYong [1 ]
Goux, Laurence [1 ]
Acik, M. [1 ]
Guzman, R. [1 ]
Chabal, Yves [1 ]
Kim, Jiyoung [1 ]
Vogel, Eric M. [1 ]
Wallace, Robert M. [1 ]
Kim, Moon J. [1 ]
Colombo, Luigi [2 ]
Cho, Kyeongjae [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
GAS; OXIDE;
D O I
10.1149/1.3119542
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Realization of graphene based devices will require a controlled integration of graphene into a device structure with multiple material components of metals and insulators. To investigate the fundamental materials problems of graphene devices, a complimentary team of researchers at UTD is applying experimental and theoretical methods to the graphene/metal and graphene/dielectric interface problems. To assess the large area graphene synthesis and the corresponding material properties, graphene oxides and grain boundaries in graphene are also examined by experiments in close connection with modeling study. Through a strong collaborative research in synthesis, characterization, and modeling, we have developed a fundamental understanding of graphene material properties which can facilitate diverse graphene based devices applications.
引用
收藏
页码:185 / +
页数:3
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