Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress

被引：0

作者：

Chen, Junting ^{[1
]}

Hua, Mengyuan ^{[1
]}

Jiang, Jiali ^{[1
]}

He, Jiabei ^{[2
]}

Wei, Jin ^{[2
]}

Chen, Kevin J. ^{[2
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

p-GaN; HEMT; reverse-bias stress; threshold voltage instability; GATE METAL; V-TH; INSTABILITY; SHIFT;

D O I：

10.1109/ispsd46842.2020.9170043

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, threshold voltage (VTH) stability under long-term off-state stress with various drain-to-source voltages was characterized in the Schottky type p-GaN gate high electron mobility transistors (HEMTs). The VTH shows a sudden increase at the very beginning of the stress, which is suggested to be caused by the hole-deficiency; while during the long-term stress, the VTH keeps shifting positively until it saturates, indicating charge trapping in barrier and/or buffer layer gradually dominates the VTH shifts.

引用

页码：18 / 21

页数：4

共 23 条

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Chen, Junting
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[3] Characterization of Threshold Voltage Instability Under OFF-State Drain Stress and Its Impact on p-GaN HEMT Performance
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[4] Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress
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[7] Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT
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