Improved carrier injection in ultrathin-body SOI Schottky-barrier MOSFETs

被引：35
|
作者：
Zhang, M. [1 ]
Knoch, J.
Appenzeller, Joerg
Mantl, S.
机构：
[1] IBN1 IT, Inst Bio & Nanosyst, D-52454 Julich, Germany
[2] Forschungszentrum Juliche, Ctr Nanoelect Syst Informat Technol, D-52454 Julich, Germany
[3] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 03期
关键词：
carrier injection; Schottky-barrier (SB)-MOSFET; ultrathin-body silicon-on-insulator (SOI);
D O I：
10.1109/LED.2007.891258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the Sills. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained.
引用
收藏
页码：223 / 225
页数：3
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