Large-signal SPICE model for depletion-type silicon ring modulators

被引：12

作者：

Kim, Minkyu ^{[1
]}

Shin, Myungjin ^{[1
,2
]}

Kim, Min-Hyeong ^{[1
,3
]}

Yu, Byung-Min ^{[1
]}

Kim, Younghyun ^{[1
,4
]}

Ban, Yoojin ^{[1
,4
]}

Lischke, Stefan ^{[5
]}

Mai, Christian ^{[5
]}

Zimmermann, Lars ^{[5
]}

Choi, Woo-Young ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 03722, South Korea

[2] Univ Michigan, Ann Arbor, MI 48109 USA

[3] Samsung Elect, Hwasung 18448, Gyeonggi Do, South Korea

[4] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[5] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

来源：

PHOTONICS RESEARCH | 2019年 / 7卷 / 09期

关键词：

PHOTONICS;

D O I：

10.1364/PRJ.7.000948

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators (Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero (NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitude-modulation 4 transmitters in the standard SPICE circuit design environment. (C) 2019 Chinese Laser Press.

引用

页码：948 / 954

页数：7

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