Spin-dependent nonlocal resistance in a Si/SiGe quantum Hall conductor

被引：2
|
作者：
Hamaya, K.
Sugihara, K.
Takahashi, H.
Masubuchi, S.
Kawamura, M.
Machida, T.
Sawano, K.
Shiraki, Y.
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Musashi Inst Technol, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.75.033307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the edge-channel transport at quantum Hall (QH) transition regions for a high-mobility Si/SiGe QH conductor by measuring nonlocal resistance (R-NL). The R-NL as a function of magnetic field changes drastically after Landau-level crossings. The features of the R-NL depend on the spin configuration between the innermost edge channel and the bulk state: the R-NL appears only when the relevant edge-bulk states have opposite spin orientations. Also, an origin of the spin-dependent resistivity [Phys. Rev. Lett. 94, 176402 (2005)] at QH transition regions is discussed in terms of the spin-dependent inter-edge-bulk scattering.
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页数：4
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