Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

被引：1

作者：

Le Dinh Trang Dang ^{[1
]}

Trinh Dinh Linh ^{[1
]}

Ngyuen Thanh Dat ^{[1
]}

Min, Changhong ^{[1
]}

Kim, Jinsang ^{[1
]}

Chang, Ik-Joon ^{[1
]}

Han, Jin-woo ^{[2
]}

机构：

[1] Kyung Hee Univ, Elect, Yongin, South Korea

[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

基金：

新加坡国家研究基金会;

关键词：

single-event upset; total ionizing dose; SRAM; fully depleted silicon-on-insulator; variation-tolerance; BULK;

D O I：

10.1109/irps45951.2020.9128910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In our earlier study, we presented a variation-tolerant and radiation- resilient SRAM cell, namely we-Quatro. In this work, we fabricate 4KB macros of 6T SRAM, Quatro, and we-Quatro in a 28nm FD-SOI. Their read and write stabilities are compared through actual silicon measurements. In addition, we perform low energy neutron, mostly thermal, and gamma irradiation tests to evaluate their SEU and TID-resilience. The results validate the efficacy of our we-Quatro.

引用

页数：5

共 3 条

[1] Impact of Random Telegraph Signals on 6T High-Density SRAM in 28nm UTBB FD-SOI
Akyel, Kaya Can
Ciampolini, Lorenzo
Thomas, Olivier
Turgis, David
Ghibaudo, Gerard
[J]. PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 94 - 97
[2] A 0.5V VMIN 6T SRAM in 28nm UTBB FD-SOI Technology Using Compensated WLUD Scheme with Zero Performance Loss
Kumar, Ashish
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Kumar, Vinay
Saha, Kaushik
[J]. 2016 29TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2016 15TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID), 2016, : 191 - 195
[3] A loadless 6T SRAM cell for sub- & near- threshold operation implemented in 28 nm FD-SOI CMOS technology
Late, Even
Ytterdal, Trond
Aunet, Snorre
[J]. INTEGRATION-THE VLSI JOURNAL, 2018, 63 : 56 - 63

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