Modeling Thermal Behavior in Multi-layered GaN HEMT-like Structures

被引：0

作者：

Nidhin, K. ^{[1
]}

Balanethiram, Suresh ^{[1
]}

Nair, Deleep R. ^{[1
]}

Chakravorty, Anjan ^{[1
]}

机构：

[1] Indian Inst Technol Madras, Dept Elect Engn, Madras, Tamil Nadu, India

来源：

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年

关键词：

TCAD thermal simulation; multi-layered structure; GaN-on-Si; peak temperature; analytical model; thermal resistance; thermal coupling;

D O I：

10.1109/edtm47692.2020.9117857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal behavior in multi-layered semiconductor structures like the one present in a Gallium Nitride high electron mobility transistor (GaN-HEMT) is investigated for the heat-flow towards the substrate. A compact analytical model is formulated to predict the peak as well as depth dependent temperature in the structure. Modeling results are verified against detailed three-dimensional TCAD thermal simulations of GaN-on-Si structures with GaN layer thickness of 3 mu m and Si substrate thickness of 100 mu m. Excellent modeling accuracy is observed for different heat source geometries and power dissipation. In addition, the proposed model is extended to estimate the static thermal coupling factor in multifinger transistors with high level of accuracy.

引用

页数：4

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