A study of RHEED pattern from the epitaxial growth of Si-Ge crystal

被引：2
|
作者：
Zhang Chong [1 ]
Ye Hui [1 ]
Zhang Lei [1 ]
Huang-Fu You-Rui [1 ]
Liu Xu [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
ACTA PHYSICA SINICA | 2009年 / 58卷 / 11期
关键词：
Si-Ge epitaxial growth; RHEED; surface reconstruction; transmission pattern; ENERGY ELECTRON-DIFFRACTION; TWINNING-SUPERLATTICE;
D O I：
10.7498/aps.58.7765
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The patterns of Reflection high energy electron diffraction (RHEED) from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetical diffraction theory of crystal. The transmission pattern is studied and interpreted, which relates to the rough surface after crystal growth. The RHEED patterns of polycrystalline rings and twin crystal and their evolvements are analyzed with respec to the epitaxial growth conditions.
引用
收藏
页码：7765 / 7772
页数：8
相关论文
共 18 条
  • [1] Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies
    Bernardi, A.
    Alonso, M. I.
    Reparaz, J. S.
    Goni, A. R.
    Lacharmoise, P. D.
    Osso, J. O.
    Garriga, M.
    [J]. NANOTECHNOLOGY, 2007, 18 (47)
  • [2] CALDERON IH, 1983, PHYS REV B, V27, P4961
  • [3] Analysis of RHEED pattern from semiconductor surfaces
    Dabrowska-Szata, M
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2003, 81 (2-3) : 257 - 259
  • [4] Formation of Si twinning-superlattice: First step towards Si polytype growth
    Fissel, A.
    Bugiel, E.
    Wang, C. R.
    Osten, H. J.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 138 - 141
  • [5] Formation of twinning-superlattice regions by artificial stacking of Si layers
    Fissel, A
    Bugiel, E
    Wang, CR
    Osten, HJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 290 (02) : 392 - 397
  • [6] Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001)
    Guo, XX
    Braun, W
    Jenichen, B
    Ploog, KH
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) : 73 - 79
  • [7] Growth of Ge quantum dots on Si(100)-(2x1) by pulsed laser deposition
    Hegazy, MS
    Elsayed-Ali, HE
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
  • [8] Growth of Si twinning superlattice
    Hibino, H
    Ogino, T
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (03): : 214 - 221
  • [9] Huang Chang-Jun, 2003, Wuli, V32, P528
  • [10] ICHIMIYA AY, 2004, REFLECTION HIGH ENER, P89
12