Morphological characterization of porous GaP prepared by electrochemical etching

被引：6
|
作者：
Shen, Y. C. [2 ]
Hon, M. H. [2 ]
Leu, I. C. [3 ]
Teoh, L. G. [1 ]
机构：
[1] Natl Pingtung Univ Sci & Technol, Dept Mech Engn, Pingtung 912, Taiwan
[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan
[3] Natl Univ Tainan, Dept Mat Sci, Tainan 700, Taiwan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 98卷 / 02期
关键词：
PHOTOLUMINESCENCE; INP; LAYERS; GAAS;
D O I：
10.1007/s00339-009-5413-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, the formation of porous GaP obtained by a constant potential anodic process has been investigated. The pore morphology and porous layer structure strongly depend on the electrochemical conditions. For anodization with an applied potential at 24.5 V in nitric organic electrolyte at room temperature, regular superlattices can be formed on the GaP crystal surface. In comparison to anodization of GaP with other traditional electrolytes, this anodic process with the nitric acid system adulterated with organic solvent can more effectively produce varied porous morphologies.
引用
收藏
页码：429 / 434
页数：6
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