Quantum Hall effect in AlAs 2D electron systems

被引：0

作者：

De Poortere, EP ^{[1
]}

Tutuc, E

Shkolnikov, YP

Vakili, K

Shayegan, M

Palm, E

Murphy, T

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 20-22期

关键词：

D O I：

10.1142/S0217979202013201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m(2)/V-S. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.

引用

页码：2917 / 2922

页数：6

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