Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

被引:32
|
作者
Brewster, Megan [1 ]
Schimek, Oliver [2 ]
Reich, Stephanie [2 ]
Gradecak, Silvija [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 20期
基金
美国国家科学基金会;
关键词
SCATTERING; NANOCRYSTALS; BAND;
D O I
10.1103/PhysRevB.80.201314
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Frohlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap Eg. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phononscattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at Eg, allowing for the development and optimization of nanowire optoelectronic devices.
引用
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页数:4
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