Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films

被引：2
|
作者：
Bagaev, V. S. [1 ]
Krivobok, V. S. [1 ]
Nikolaev, S. N. [1 ]
Chernopitssky, M. A. [1 ]
Savin, K. A. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Leninskii Prospect 53, Moscow 119991, Russia
来源：
JOURNAL OF RUSSIAN LASER RESEARCH | 2019年 / 40卷 / 03期
基金：
俄罗斯科学基金会;
关键词：
transition metal dichalcogenides; Raman scattering; exciton;
D O I：
10.1007/s10946-019-09801-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We studied the Raman scattering in bulk and four-monolayer thick MoS2 films under the resonance laser excitation of A, B, and C excitons. We demonstrate the fine structure agility of a phonon mode associated with out-of-plane vibration of sulfur atoms (A(1g)) when passing from bulk to atomically thin film. The C exciton resonance excitation allows us to register the line corresponding to optical-phonon (E-1g) scattering and the set of peaks with a 660 - 740 cm(-1) Stokes shift associated with resonance scattering by two optical (E-u) phonons.
引用
收藏
页码：269 / 273
页数：5
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