Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films

被引:0
|
作者
Xin, Yangmei [1 ]
Zhang, Dong [1 ]
Li, Zizhan [1 ]
Qin, Hua [1 ]
Xiu, Junshan [1 ]
Li, Zhao [1 ]
Liu, Yunyan [1 ]
Liu, Huiqiang [1 ]
机构
[1] Shandong Univ Technol, Sch Phys & Optoelect Engn, Zibo 255000, Peoples R China
基金
中国国家自然科学基金;
关键词
41;
D O I
10.1039/d0nj06088g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
(Al0.55In0.45)(2)O-3:Sn films were prepared on MgO (110) single crystalline substrates by the high vacuum metal organic vapor phase epitaxy (MOVPE) method. Structural analyses showed that the (Al0.55In0.45)(2)O-3:Sn film exhibited a variation from an amorphous structure to a crystalline structure with an increase in the tin content. By regulating the tin content, the resistivity of the (Al0.55In0.45)(2)O-3:Sn film could be reduced by up to two orders of magnitude at a tin content of 21%. A resistivity of 1.19 x 10(-3) omega cm was acquired for the film, along with a mobility of 17.5 cm(2) V-1 s(-1). The average transmittance of the (Al0.55In0.45)(2)O-3:Sn films in the visible region exceeded 82%. Bandgap values in the range of 5.45 to 4.21 eV could be obtained for samples with various tin contents. The variations of extinction coefficients and refractive indexes for the (Al0.55In0.45)(2)O-3:Sn films with the change of light wavelength were studied.
引用
收藏
页码:4318 / 4325
页数:8
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