Fabrication of Si field emitter arrays integrated with metal-oxide-semiconductor field-effect transistor driving circuits

Si field emitter arrays (FEAs) were monolithically integrated with metal-oxide-semiconductor field-effect-transistor (MOSFET) based driving circuits on a Si chip for the first step toward developing the field-emission-display-on-a-chip (FED-on-a-chip), which is a candidate for,the next-generation FED. We developed a fabrication process of Si FEAs integrated with MOSFET driving circuits. A 4X4 matrix Si FEA, emission-control MOSFET, and simple driving circuits consisting of a shift register were integrated on the same chip. The operation of each element, such as MOSFET controlled Si FEAs and logic circuits for the driver, was confirmed. The emission current from the Si FEA can be controlled by the built-in MOSFET at a voltage of less than 5 V, which can be driven by the built-in driving circuits: The operation of the 4 X 4 matrix FEA with driving circuits was demonstrated. This is the first operation of the FEA integrated with MOSFET logic circuits. The detailed design and fabrication processes are described. 2002 American Vacuum Society.