Wafer-scale packaged RF-MEMS switches

被引：12
|
作者：
Muldavin, J. [1 ]
Bozler, C. [1 ]
Keast, C. [1 ]
机构：
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源：
2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年
关键词：
MEMS; packaging; high-isolation; hermetic; SP4T; switch;
D O I：
10.1109/MWSYM.2006.249484
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents results of fully packaged RF-MEMS switches including capacitive series, series-shunt, and SP4T switch nodes. The RF-MEMS capacitive switches are packaged using recently developed wafer scale low-loss and broad-band packaging technology developed at MIT Lincoln Laboratory. A packaged series capacitive switch with 0.11 dB insertion loss and better than 19 dB isolation, a series-shunt packaged capacitive switch with 0.3 dB insertion loss and better than 54 dB isolation, and a SP4T switch with less than 0.26 dB insertion loss and better than 25 dB isolation at 20 GHz are reported.
引用
收藏
页码：267 / +
页数：2
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