Single-crystal X-ray diffraction analysis of nonplanar autoepitaxial silicon layers

被引：0
|
作者：
Bublik, V. T. [1 ]
Kozhitov, L. V. [1 ]
Kondratenko, T. T. [1 ]
机构：
[1] State Technol Univ, Moscow Steel & Alloys Inst, Moscow 119049, Russia
来源：
INORGANIC MATERIALS | 2009年 / 45卷 / 14期
关键词：
Dislocation Density; Epitaxial Layer; Power Semiconductor Device; Closed Cylinder; Nauchnykh Trudov;
D O I：
10.1134/S0020168509140179
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We describe a method to study the structure of semiconductor autoepitaxial layers grown in the form of closed cylinders on the external side surface of hollow cylindrical single-crystal substrates. We compare the values of dislocation density in the structure of nonplanar layers obtained by single-crystal X-ray diffraction analysis (measurements of rocking curves) and by the etch pit method in the [111] plane. The results of singlecrystal X-ray diffraction analysis of nonplanar autoepitaxial silicon layers are shown to be reliable.
引用
收藏
页码：1610 / 1613
页数：4
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