Design guides for a correct DC operation in RTD-based threshold gates

被引：0
|
作者：
Quintana, Jose M. [1 ]
Avedillo, Maria J. [1 ]
Nunez, Juan [1 ]
机构：
[1] Ctr Nacl Microelect, Inst Microelect Sevilla, Edificio CICA Avda Reina Mercedes S-N, Seville 41012, Spain
来源：
DSD 2006: 9TH EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN: ARCHITECTURES, METHODS AND TOOLS, PROCEEDINGS | 2006年
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D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A correct DC operation is essential before analyzing other aspects of the circuit behavior. This paper analyzes how the presence of the HFET transistor modifies the DC operation of follower circuits based on MOBILE, and can prevent its correct operation. On the basis of this analysis, guidelines for the design of threshold gates which are implemented as a generalization of the follower circuit topology are derived.
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页码：530 / +
页数：2
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