An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator With a Defected-Ground Structure

被引:79
|
作者
Zhong, Yi [1 ,2 ]
Yang, Yang [3 ,4 ]
Zhu, Xi [5 ]
Dutkiewicz, Eryk [5 ]
Shum, Kam Man [6 ]
Xue, Quan [6 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Informat & Commun Engn, Beijing 100876, Peoples R China
[2] Univ Technol Sydney, Ultimo, NSW 2007, Australia
[3] City Univ Hong Kong, State Key Lab Millimetre Waves, Hong Kong, Hong Kong, Peoples R China
[4] Univ Technol Sydney, Sch Comp & Commun, Ultimo, NSW 2007, Australia
[5] Univ Technol Sydney, Sch Comp & Commun, Sydney, NSW 2007, Australia
[6] City Univ Hong Kong, Dept Elect Engn, State Key Lab Millimetre Waves, Hong Kong, Hong Kong, Peoples R China
基金
澳大利亚研究理事会; 中国国家自然科学基金;
关键词
Bi-CMOS; broadside-coupled meander-line resonator (BCMLR); defected-ground structure (DGS); millimeter-wave; SiGe and slow-wave structure; CMOS; DESIGN;
D O I
10.1109/LED.2017.2690283
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13-mu m SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an LC-equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm(2) (0.126 x 0.3 mm(2)).
引用
收藏
页码:626 / 629
页数:4
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