Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B Films

被引：1
|
作者：
Tsuchida, R. [1 ]
Mori, S. [2 ]
Sato, T. [2 ]
Uchitomi, N. [1 ]
Mizushima, I. [2 ]
机构：
[1] Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka, Niigata 9402188, Japan
[2] Semicond Co, Toshiba Corp, Proc & Mfg Engn Ctr, Yokohama, Kanagawa 2358522, Japan
来源：
SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期
关键词：
D O I：
10.1149/1.2986781
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Selective epitaxial growth of B-doped SiGe (SiGe:B) films is one of the key techniques for the embedded SiGe (e-SiGe) structure for high-performance pMOSFETs. Both the high Ge composition and the high B-doping concentration are desirable for increasing the stress in the channel region and decreasing the series resistance in the source/drain region. However, increasing Ge composition and B concentration may lead to defects in the epitaxial SiGe:B layer and thus to the roughening of the surface of the films. In this work, influence of B doping on the surface roughness and the roughening process in SiGe:B epitaxial films are examined.
引用
收藏
页码：267 / +
页数：2
相关论文
共 50 条
  • [1] In-situ monitoring of surface hydrogen on the a-SiGe:H films
    Toyoshima, Y
    Ganguly, G
    Ikeda, T
    Saitoh, K
    Kondo, M
    Matsuda, A
    [J]. AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 567 - 572
  • [2] Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
    Tokuda, Norio
    Umezawa, Hitoshi
    Saito, Takeyasu
    Yamabe, Kikuo
    Okushi, Hideyo
    Yamasaki, Satoshi
    [J]. DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) : 767 - 770
  • [3] In-situ boron doping of chemical-bath deposited CdS thin films
    Khallaf, Hani
    Chai, Guangyu
    Lupan, Oleg
    Chow, Lee
    Heinrich, Helge
    Park, S.
    Schulte, Alfons
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (02): : 256 - 262
  • [4] In-Situ Measurement of Surface Tension During Electrochemical Doping of Polypyrrole Films
    Lee, Myong-Hoon
    [J]. MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1998, 316 : 329 - 332
  • [5] In-situ measurement of surface tension during electrochemical doping of polypyrrole films
    Chonbuk Natl Univ, Chonbuk, Korea, Republic of
    [J]. Mol Cryst Liq Cryst Sci Technol Sect A Mol Crys Liq Cryst, (329-332):
  • [6] In-situ TEM observations of surface roughening and defect formation in lattice mismatched heteroepitaxial thin films
    Ozkan, CS
    Nix, WD
    Gao, HJ
    [J]. THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII, 1998, 505 : 291 - 298
  • [7] In-situ Observation and Anisotropy of Free Surface Roughening for Polycrystalline Metals
    Furushima, Tsuyoshi
    Masuda, Tetsuro
    Manabe, Ken-ichi
    [J]. ADVANCES IN MATERIALS PROCESSING IX, 2010, 443 : 450 - 455
  • [8] Surface tension of polypyrrole films at different doping levels measured by in-situ experiment
    Lee, MH
    Kim, SS
    Rhee, JM
    Kang, YK
    [J]. POLYMER-KOREA, 1998, 22 (04) : 619 - 624
  • [9] Observation of boron doping induced surface roughening in silicon molecular beam epitaxy
    [J]. Appl Phys Lett, 23 (3278):
  • [10] Observation of boron doping induced surface roughening in silicon molecular beam epitaxy
    Lu, XK
    Jiang, ZM
    Zhu, HJ
    Zhang, XJ
    Wang, X
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3278 - 3280
12345