MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

被引：22

作者：

Wang, Xiaoliang ^{[1
]}

Wang, Cuimei ^{[1
]}

Hu, Guoxin ^{[1
]}

Mao, Hongling ^{[1
]}

Fang, Cebao ^{[1
]}

Wang, Junxi ^{[1
]}

Ran, Junxue ^{[1
]}

Li, Hanping ^{[1
]}

Li, Jinmin ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 791-793期

关键词：

2DEG; electron mobility; MOCVD; semiconducting III-V materials; HEMT;

D O I：

10.1016/j.jcrysgro.2006.10.217

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. Electron mobility of 2185 cm(2)/V s at room temperature and 15,400 cm(2)/V s at 80 K with 2DEG density of 1.1 X 10(13) cm(-2) are achieved. The corresponding sheet resistance of the HEMT wafer is 258.7 Omega/sq. The AlN interfacial layer between the GaN buffer and the AlGaN barrier layer reduces the alloy disorder scattering. X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements have been conducted, and confirmed that the wafer has a high crystal quality. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：791 / 793

页数：3

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