Light-induced transverse voltage effect in c-axis inclined BiCuSeO single crystalline thin films

被引：14

作者：

Yan, Guoying ^{[1
]}

Wang, Lian ^{[1
]}

Qiao, Shuang ^{[1
]}

Wu, Xiaolin ^{[1
]}

Wang, Shufang ^{[1
]}

Fu, Guangsheng ^{[1
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2016年 / 6卷 / 02期

基金：

中国国家自然科学基金;

关键词：

THERMOELECTRIC PROPERTIES; YBA2CU3O7-DELTA FILMS; MODULATION; LAYER;

D O I：

10.1364/OME.6.000558

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light-induced transverse voltage effects in c-axis inclined BiCuSeO thin films have been investigated by using different lasers with the wavelength ranging from ultraviolet (UV) to near infrared (NIR). Open-circuit voltage signals are all clearly observed when the film surface is irradiated by these lasers. Especially, a very large voltage signal with a magnitude exceeding several volts is obtained under the irradiation of the UV pulsed laser, and the voltage polarity of this signal is reversed when the sample is irradiated from the substrate side. A possible mechanism based on the transverse thermoelectric effect is proposed to explain the above experiment results. This work demonstrates the potential application of BiCuSeO for broad-band photodetectors, especially for UV pulsed light detection. (C) 2016 Optical Society of America

引用

页码：558 / 565

页数：8

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