Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology

被引：1

作者：

Jiang, Hai ^{[1
]}

Sagong, Hyunchul ^{[1
]}

Kim, Jinju ^{[1
]}

Shim, Hyewon ^{[1
]}

Kim, Yoohwan ^{[1
]}

Park, Junekyun ^{[1
]}

Uemura, Taiki ^{[1
]}

Ji, Yongsung ^{[1
]}

Jeong, Taeyoung ^{[1
]}

Kwon, Dongkyun ^{[1
]}

Rhee, Hwasung ^{[1
]}

Pae, Sangwoo ^{[1
]}

Lee, Brandon ^{[1
]}

机构：

[1] Samsung Elect, Foundry Business, 1 Samsung Ro, Gyeonggi Do 17113, South Korea

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

Self-heating effect(SHE); FinFET; Layout Proximity; Heat spreading;

D O I：

10.1109/irps45951.2020.9128322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating effect (SHE, Delta T-sh) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced technology, which substantially impacts on the integrated circuit (IC)'s design schemes. In this work, a new heat-dissipation-path based SHE model is proposed to describe the heat spreading to layout proximity by interactive thermal resistance (R-th(i,R-j)). Meanwhile, R-th-matrix methodology is employed to account for SHE layout proximity effect by linear superposition algorithm. Therefore, Delta T-sh profile can be more accurately reckoned with account for thermal interaction effect.

引用

页数：5

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