Pure Al thin film protective layer to prevent stress migration in Al wiring for thin-film transistors

被引：13
|
作者：
Takatsuji, H
Haruta, K
Tsuji, S
Kuroda, K
Saka, H
机构：
[1] IBM Japan Ltd, Display Technol, Kanagawa 242, Japan
[2] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 46401, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2000年 / 125卷 / 1-3期
关键词：
nanoindentation techniques; overcoated pure aluminum thin film; sputtering; stress migration; thin-film transistor liquid crystal displays;
D O I：
10.1016/S0257-8972(99)00599-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The anti-stress migration property of layered structure aluminum (Al) thin films overcoated with pure Al was investigated for application of such films as interconnect materials in large arrays of high-resolution thin-film transistor liquid crystal displays (TFT-LCDs). It was found that no hillock or whisker generation occurred in a pure Al thin film with a sputter-deposited fine-grained polycrystalline pure Al layer after exposure to mechanical and 300 degrees C thermal stresses. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM) analyses revealed the morphology of the layered structure thin film and the mechanism for the prevention of stress migration in the film. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：167 / 172
页数：6
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