Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Electroluminescence (EL) from light-emitting diodes (LEDs) at wavelengths in the range 1000-1650 nm, current densities of up to 10 A/cm(2), and temperature of 64 K has been studied. p-Cz-Si wafers were irradiated with low-energy electrons (a variant of the technique based on rapid thermal annealing) and annealed in a chlorine-containing atmosphere at 1100 degrees C. To obtain p-n junctions and ohmic contacts, layers of polycrystalline silicon doped with phosphorus and boron were deposited by vapour-phase epitaxy onto the opposite sides of the wafers. The dislocation structure in the samples under study consists of gliding 60 degrees dislocations and perfect and faulted dipoles. An analysis showed that the transformation of EL spectra with current is precisely described by six Gaussian lines. The peak wavelengths are current-independent and equal to 1235, 1309, 1369, 1414, 1472, and 1515 nm. The current dependences of the intensity of the EL lines have been determined. (C) 2017 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of Extended Defects In Semiconductors 2016 (EDS 2016).