Theoretical investigation of van der Waals forces between solid surfaces at nanoscales

被引:17
|
作者
Kudryavtsev, Yaroslav V. [1 ]
Gelinck, Edwin [2 ]
Fischer, Hartmut R. [2 ]
机构
[1] RAS, AV Topchiev Petrochem Synth Inst, Moscow 119991, Russia
[2] TNO Sci & Ind, Mat Performance, NL-5600 AN Eindhoven, Netherlands
关键词
Semi-empirical models and model calculations; van der Waals force; Sticking; Silicon; Silicon oxides; Surface structure; morphology; roughness; and topography; ROUGH SURFACES; ADHESION; FRICTION; HUMIDITY; WATER; CONDENSATION; MODEL;
D O I
10.1016/j.susc.2009.06.007
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A theoretical investigation of van der Waals forces acting between two solid silicon surfaces at separations from zero to approximately 20 nm is presented. We focused our efforts on the analysis of different factors that can cause deviations from the classical pressure-distance dependence p similar to 1/D-3. It is demonstrated that a layer (oxide or water) at any of the surfaces influences the pressure up to distances, which are an order of magnitude larger than its own thickness. A jump on the p(D) curve is expected at contact of the adsorbed liquid layers. The retardation of van der Waals forces at 5 < D < 20 nm has the similar effect on the pressure as 1 nm oxide layers. At the far end of this range the pressure decreases by 30% due to the retardation. Nanoscale roughness plays a great role when the surfaces are close-to-contact, the crucial factor is the height distribution of asperities. However, their curvature and surface density are also important, as well as the amount of adsorbed water. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:2580 / 2587
页数:8
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