Structural and photoluminescence properties of Co-doped ZnO nanorods prepared by RF-magnetron sputtering

被引:0
|
作者
Al-Salman, Husam S. [1 ,2 ]
Abdullah, M. J.
机构
[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
[2] Univ Basrah, Coll Sci, Dept Phys, Basrah, Iraq
来源
关键词
Co-doped ZnO nanorods; PL property; RF-magnetron sputtering; OPTICAL-PROPERTIES; THIN-FILMS; DEPENDENCE; LAYER;
D O I
10.4028/www.scientific.net/AMR.879.32
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cobalt-doped ZnO nanorods were successfully synthesized on SiO2/Si substrate using RF-magnetron sputtering at room temperature. The structural, morphological, and photoluminescence (PL) properties of undoped and Co-doped ZnO nanostructure were characterized using X-ray diffraction, field emission-scanning electron microscopy, and PL analyses. The results showed that Co2+ replaces Zn2+ in the ZnO lattice without changing the wurtzite structure. As the Co concentration increases, the structure becomes highly crystalline and is gradually converted into nanorods with no extra phases. The as-synthesized nanorod arrays are dense and vertically grow on the SiO2 substrate. The arrays exhibit diameters of approximately 56.89 nm as well as lengths that range from 247.9 nm to 527.5 nm. PL analysis reveals that the ultraviolet (UV) emission intensity decreases and exhibits a blue shift as the Co doping level is increase.
引用
收藏
页码:32 / +
页数:2
相关论文
共 50 条
  • [1] Investigation of Co-doped PZT films deposited by rf-magnetron sputtering
    Gheorghiu, Felicia
    Apetrei, Radu
    Dobromir, Marius
    Ianculescu, Adelina
    Luca, Dumitru
    Mitoseriu, Liliana
    PROCESSING AND APPLICATION OF CERAMICS, 2014, 8 (03) : 113 - 120
  • [2] Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method
    Kim, D
    Shimomura, T
    Wakaiki, S
    Terashita, T
    Nakayama, M
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 741 - 744
  • [3] Optical and electrical properties of (Al, V) co-doped ZnO films prepared by RF magnetron sputtering
    Zheng, Jia Hong
    Niu, Shi Feng
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (9-10): : 849 - 853
  • [4] Structure and Magnetic Properties of Mn-Fe co-doped ZnO thin Films Depositedby RF-Magnetron Sputtering
    Malapati, V.
    Venkataratnam, K. K.
    Singh, R.
    62ND DAE SOLID STATE PHYSICS SYMPOSIUM, 2018, 1942
  • [5] RETRACTED: Structural, optical, and electrical properties of Schottky diodes based on undoped and cobalt-doped ZnO nanorods prepared by RF-magnetron sputtering (Retracted Article)
    Al-Salman, Husam S.
    Abdullah, M. J.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2013, 178 (16): : 1048 - 1056
  • [6] Study on the structural, electrical and optical properties of AL-F co-doped ZnO thin films prepared by RF magnetron sputtering
    Ma R.-X.
    Wang M.-K.
    Kang B.
    Wang Y.-G.
    Optoelectronics Letters, 2011, 7 (1) : 0045 - 0048
  • [7] Effect of Co-doping on the structure and optical properties of ZnO nanostructure prepared by RF-magnetron sputtering
    Al-Salman, Husam S.
    Abdullah, M. J.
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 60 : 349 - 357
  • [8] Study on the structural,electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering
    马瑞新
    王目孔
    康勃
    王永刚
    OptoelectronicsLetters, 2011, 7 (01) : 45 - 48
  • [9] Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters
    Kim, Jong Hoon
    Du Ahn, Byung
    Kim, Choong Hee
    Jeon, Kyung All
    Kang, Hong Seong
    Lee, Sang Yeol
    THIN SOLID FILMS, 2008, 516 (07) : 1330 - 1333
  • [10] Structural and electrical properties of Co-doped β-FeSi2 thin films prepared by RF magnetron sputtering
    Sawada, M.
    Katsumata, H.
    Tomokuni, Y.
    Uekusa, S.
    ASIAN SCHOOL-CONFERENCE ON PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS, 2012, 23 : 9 - 12