Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate

被引：55
|
作者：
Chang, Wen-Yuan [1 ]
Liao, Jeng-Hwa [1 ]
Lo, Yun-Shan [1 ]
Wu, Tai-Bor [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期
关键词：
calcium compounds; capacitors; lanthanum compounds; praseodymium compounds; random-access storage; space-charge-limited conduction; texture; thin films; (100)-TEXTURED LANIO3 ELECTRODE; PB(ZR0.53TI0.47)O-3; INTERFACE;
D O I：
10.1063/1.3126057
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The resistive switching characteristics of Pr0.7Ca0.3MnO3 (PCMO) thin films deposited on LaNiO3 (LNO)-electrodized Si substrate were investigated. Highly (100)-textured PCMO films were grown on the (100)-oriented LNO electrode. They exhibited reversible and steady bistable resistance switching behavior. The resistive switching behavior of PCMO capacitors on LNO is related to the trap-controlled space charge limited current mechanism and LNO/PCMO/LNO capacitor exhibits the strongest resistive switching effect with a resistance ratio for about two orders of magnitude.
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页数：3
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