Preparation of silicon oxide with bubble layer by helium plasma irradiation followed by oxidation

被引：0
|
作者：
Hino, T
Miho, S
Yamauchi, Y
Hirohata, Y
Nishikawa, M
机构：
[1] Hokkaido Univ, Dept Nucl Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Sci Solut Inc, Meguro Ku, Tokyo, Japan
来源：
VACUUM | 2002年 / 66卷 / 3-4期
关键词：
D O I：
10.1016/S0042-207X(02)00136-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon oxide bubble layer on silicon wafer was produced by helium ion irradiation followed by oxygen plasma irradiation or thermal oxidation. By the helium ion irradiation, a bubble layer was formed. The thickness and porosity of bubble layer depended on the irradiation condition. By the oxygen plasma irradiation to the bubble layer, only the surface of the bubble layer was oxidized. By the thermal oxidation, an entire region of the bubble layer was oxidized. In the latter case, the thickness of the silicon oxide bubble layer was as high as approximately 200 nm in the present experiment. Estimated dielectric constant of this layer was approximately 3. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：311 / 315
页数：5
相关论文
共 50 条
  • [1] Surface oxidation and bubble formation of silicon by oxygen/helium glow discharge
    Miho, S.
    Yamauchi, Y.
    Hirohata, Y.
    Hino, T.
    Nishikawa, M.
    2001, Vacuum Society of Japan (44):
  • [2] Fabrication of Ultrathin Silicon Oxide Layer by Low Pressure Rapid Thermal Oxidation and Remote Plasma Oxidation
    Ko, Cheon Kwang
    Lee, Won Gyu
    KOREAN CHEMICAL ENGINEERING RESEARCH, 2008, 46 (02): : 408 - 413
  • [3] Surface morphology changes of silicon carbide by helium plasma irradiation
    Yamashita, N.
    Omori, K.
    Kimura, Y.
    Hinoki, T.
    Ibano, K.
    Lee, H. T.
    Ueda, Y.
    NUCLEAR MATERIALS AND ENERGY, 2018, 16 : 145 - 148
  • [4] Preparation of bioactive amorphous-like titanium oxide layer on titanium by plasma oxidation treatment
    Ou, Keng-Liang
    Shih, Yung-Hsun
    Huang, Chiung-Fang
    Chen, Chang-Chih
    Liu, Chung-Ming
    APPLIED SURFACE SCIENCE, 2008, 255 (05) : 2046 - 2051
  • [5] Evolution of surface morphology and helium bubble in tungsten under 40 keV helium ions implantation followed by deuterium plasma exposure
    Xia, Tongjun
    Wang, Zizhao
    Jiang, Zhenyu
    Shi, Yongzhi
    Wu, Jianwei
    Ren, Xinyu
    Zhu, Kaigui
    PHYSICA SCRIPTA, 2022, 97 (05)
  • [6] Low-temperature Microwave-based Plasma Oxidation of Ge and Oxidation of Silicon followed by Plasma Nitridation
    Lerch, W.
    Schick, T.
    Sacher, N.
    Kegel, W.
    Niess, J.
    Czernohorsky, M.
    Riedel, S.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6, 2016, 72 (04): : 101 - 114
  • [7] The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation
    Shi, Quan
    Kajita, Shin
    Feng, Shuangyuan
    Ohno, Noriyasu
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (40)
  • [8] Black silicon with nanostructured surface formed by low energy helium plasma irradiation
    Takamura, S.
    Aota, T.
    Iwata, H.
    Maenaka, S.
    Fujita, K.
    Kikuchi, Y.
    Uesugi, Y.
    APPLIED SURFACE SCIENCE, 2019, 487 : 755 - 765
  • [9] Si emission into the oxide layer during oxidation of silicon carbide
    Hijikata, Yasuto
    Akasaka, Yurie
    Yagi, Shuhei
    Yaguchi, Hiroyuki
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 553 - 556
  • [10] Influence of light ion irradiation of the oxide layer on the oxidation rate of zircaloy-4: Irradiation of the post-transition oxide layer
    Tupin, Marc
    Venague, Boris
    Gutierrez, Gaelle
    CORROSION SCIENCE, 2019, 161
12345