Bandgap control for the lattice-matched InGaAs/InAlAs/InP single quantum wells

被引：0
|
作者：
Wang, Y. [1 ,2 ]
Sheng, X. Z. [1 ]
Guo, Q. L. [2 ]
Liang, B. L. [2 ]
机构：
[1] Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China
[2] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
来源：
1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016) | 2017年 / 167卷
关键词：
PHOTOLUMINESCENCE; PHOTOREFLECTANCE; EXCITONS; INAS; HEMT;
D O I：
10.1088/1757-899X/167/1/012022
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
In0.53Ga0.47As/In0.52Al0.48As single quantum well (SQW) grown by molecular-beam epitaxy on the InP (001) substrate is investigated by using photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL). At the low temperature of 8 K and excitation intensity of 1 W/cm(2), the emitting wavelength of QWs shifts from 1387 nm to 1537 nm when the well width increases from 5 nm to 50 nm, approaching the emitting wavelength of bulk In0.52Al0.48As. The emitting wavelength of QWs can be flexibly tailored by varying the thickness of the InGaAs layer.
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页数：4
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