Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions

被引：18

作者：

Tsunegi, S. ^{[1
]}

Sakuraba, Y. ^{[2
]}

Oogane, M. ^{[1
]}

Naganuma, Hiroshi ^{[1
]}

Takanashi, K. ^{[2
]}

Ando, Y. ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

关键词：

boron alloys; cobalt alloys; fluctuations; iron alloys; magnesium compounds; magnetic moments; magnetic thin films; manganese alloys; silicon alloys; spin polarised transport; tunnelling magnetoresistance;

D O I：

10.1063/1.3156858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/CoFeB(0-2 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.

引用

页数：3

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